The effect of GO buffer layer insertion on OLED electroluminescence

T.H.T Aziz, M.M. Salleh, M. Yahya, A.A. Umar, M.Y.A. Rahman, C.F. Dee, C.C. Yap, B.Y.M. Majlis

Abstract


In this paper, we report a spin coated graphene oxide serve as electron buffer layer for OLED devices with structure of ITO/PEHF/GO/Al where PEHF is poly[9,9-di-(2-ethylhexyl)-fluorenyl-2,7-diyl] emitting polymer. It is predicted that the large band gap of graphene oxide can improve the electron injection into the polymer to balance the injected hole charges leading to higher electroluminescence. Preliminary results show insertion of GO layer reduced the turn-on voltage (Von) from 11.0 V to 8.0 V and at the same time increased the brightness from 179 cd to 380 candela. We discovered that the brightness enhancement is caused by exciplex at the GO/polymer interface.


Keywords


OLED; electroluminescence; graphene oxide; exciplex

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