Alignment of reduced graphene oxide on interdigitated electrode by dielectrophoresis method for hydrogen gas sensor

Abstract

Graphene is a popular 2D material that has been explored to improve the performance of many devices due to its unique properties. Nowadays, reduced graphene oxide (rGO) has been used in many application because the surface defect density can be controlled compare to pristine graphene. It also has a band gap which makes it easier to integrate with any technologies. In semiconductor fabrication, a simple process and large scale device fabrication is needed to decrease the complexity of fabrication process. In this work, dielectrophoresis (DEP) technique has been used to deposit the rGO accurately on a substrate. The rGO was dropped on top of the 5 μm gap interdigitated electrodes, where the DEP technique was utilized afterwards for the deposition purposes. The electrical conductivity increases due to the percolation threshold effect. Raman spectroscopy confirmed the presence of rGO in between the channel of electrodes. This is a simple and less complex technique which suitable for large scale device fabrication.